Electrical and thermal transport in a twisted heterostructure of transition metal dichalcogenide and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>CrI</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> connected to a superconductor

The broad tunability of the proximity exchange effect between transition-metal dichalcogenides (TMDCs) and chromium iodide (CrI$_3$) heterostructures offers intriguing possibilities for use TMDCs in two-dimensional magnetoelectrics. In this work, influence twist angle gate electric field on thermal transport a TMDC/CrI$_3$ junction is investigated using Dirac -Bogoliubov-de Gennes equation. We show that significant amounts can be controlled by spin-splitting band structures due to spin-orbit interaction, exchange-splitting bands arises from effect. property Andreev reflection (AR) process highly dependent spin valley polarized states coupling. Remarkably, perfect AR possible over wide bias range voltage tune local Fermi energy varying type charge doping. proposed structure with $p$-type doping found have larger conductance high conductance. further that, depending TMDC material chemical potential layer, twisting lead suppression or increase as well enhancement potentials smaller than superconducting regime.